Small-Signal Model of GaN-on-Si HEMTs Based on Improved Imperialist Competitive Algorithm
We propose an improved imperialist competitive algorithm (I-ICA)-based extraction method for small-signal model of GaN HEMT on Si. The proposed algorithm introduces differential evolution and boundary processing in the empire assimilation process, which effectively improves the search ability and search speed. The experimental results show that the improved imperialistic competition algorithm greatly improves the traditional optimization algorithm, which falls into local optimum. In the frequency range from 0.1 to 9 GHz, the simulation results agree well with the measurements under different operating conditions, indicating the reliability of the model.
Authors
- Xiao Ma (ORCID: https://orcid.org/0000-0002-1935-6328)
- Hong Wang (ORCID: https://orcid.org/0000-0002-8875-0521)
- Tianjiao Li (ORCID: https://orcid.org/0000-0003-4341-234X)
- Weiyuan Wang (ORCID: https://orcid.org/0000-0003-1994-4135)
- Kairan Bian
Institutions
- San’an Optoelectronics (China) (CN)
- South China University of Technology (CN)
Publication Details
- Journal
- IEEE Microwave and Wireless Technology Letters
- Published
- 2025-02-04
- DOI
- https://doi.org/10.1109/lmwt.2025.3535773
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26