Tailoring quantum wells in AlGaInP laser diodes for superior optical performance

Abstract This work employed composition-graded quantum wells (QWs) to increase the performance of red laser diodes (LDs) based on Aluminum gallium indium phosphide (AlGaInP). Two LDs, one with conventional QWs and other with composition-graded QWs, were studied numerically. The findings showed that the LD with composition-graded QWs significantly improved the device performance such as enhanced carrier concentration in the active region, decreased carrier leakage, improved carrier injection efficiency, and a higher rate of stimulated recombination rate. According to the results of the simulation, grading the QWs enhanced the slope efficiency to 0.80 W A −1 and successfully reduced the threshold current to 300 mA. This enhanced performance, compared to conventional LDs, demonstrates the promising impact of our employed composition grading.