Dopant Sensitive Electrolytic Etching of Germanium with High Selectivity

The enhanced charge carrier mobility and photon absorption compared to silicon make germanium attractive for next-generation photo diodes. However, the complex oxidation behavior of germanium challenges dopant-dependent selective etching that is desired for the fabrication of backside imaging architectures. This report demonstrates electrolytic wet etching of p-doped germanium which proceeds up to 17,500x faster than etching of intrinsic germanium. Homoepitaxially grown layers of germanium were electrolytically etched in potassium hydroxide over a range of biases. Intermittent acquisition of cyclic voltammetry spectra during etching has suppressed the formation of electric double layers, maintained appreciable etch rates, and allowed for in operando process control. The observed etch rates scaled with dopant concentration. An effective etch rate of germanium removal of 2.100 ± 0.044 μm min −1 was accomplished for a boron dopant concentration of 6E18cm −3 . For nominally intrinsic germanium, however, an effective etch rate of only 0.00012 ± 0.00011 μm min −1 was observed. A series of systematic electrolytic etch experiments have revealed the transfer of 4 electrons per germanium atom removed.