Self-Powered Photodetectors Based on Ta<sub>2</sub>NiSe<sub>5</sub>/p-GaN Heterostructures for UV Imaging Applications

Self-powered ultraviolet (UV) photodetectors, which have wide application prospects in optoelectronic fields, have gained great interest in recent years due to their high sensitivity and low power consumption. In this work, a UV photodetector based on a Ta2NiSe5/p-GaN mixed-dimensional van der Waals heterostructure is fabricated. Owing to its type-I band gap alignment, the fabricated Ta2NiSe5/p-GaN heterostructure has demonstrated low dark current and rapid response time under 355 nm illumination. Taking advantage of an excellent built-in electrical potential, the device shows impressive photovoltaic properties and can work without an external power supply. Furthermore, the photodetector showed its capabilities in UV imaging. The results are expected to create opportunities for developing high-performance self-powered UV photodetectors.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-02-03
DOI
https://doi.org/10.1021/acsaelm.4c02210
Citations
12
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
6.21

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article

Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications

Guofeng Yang, Bingjie Ye, X. H. Zhang, Yushen Liu et al.
12 citations
ACS Applied Electronic Materials
2D Materials and Applications
6.21
article

Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications

Guofeng Yang, Bingjie Ye, X. H. Zhang, Yushen Liu, И. Н. Пархоменко, Xifeng Yang, Liejia Qian, Ф. Ф. Комаров, Yu Liu, Jiale Zhang
article en
12 citations

Abstract

Self-powered ultraviolet (UV) photodetectors, which have wide application prospects in optoelectronic fields, have gained great interest in recent years due to their high sensitivity and low power consumption. In this work, a UV photodetector based on a Ta2NiSe5/p-GaN mixed-dimensional van der Waals heterostructure is fabricated. Owing to its type-I band gap alignment, the fabricated Ta2NiSe5/p-GaN heterostructure has demonstrated low dark current and rapid response time under 355 nm illumination. Taking advantage of an excellent built-in electrical potential, the device shows impressive photovoltaic properties and can work without an external power supply. Furthermore, the photodetector showed its capabilities in UV imaging. The results are expected to create opportunities for developing high-performance self-powered UV photodetectors.

ACS Applied Electronic MaterialsVol. 7(3)
Jiangnan University (CN), University of Copenhagen (DK), Suzhou University of Technology (CN), Belarusian State University (BY), Institute of Molecular Functional Materials (CN), Quantum Devices (United States) (US)
National Natural Science Foundation of China, Jiangnan University, Jiangsu Provincial Key Research and Development Program
Openalex Percentile: Top 3%
2D Materials and Applications
6.21
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