High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack

Compact high-power sub-nanosecond laser pulse sources with a wavelength of 940 nm are developed and studied. A design for laser pulse sources based on a vertical stack is proposed, which includes a semiconductor laser chip and a current switch chip. To create a compact high-speed current switch, a three-electrode heterothyristor is developed. It is found that the use of heterothyristor-based current switches allows the creation of a low-loss pump current circuit, generating short current pulses and operating the semiconductor laser in gain-switching mode. For the semiconductor laser chip, an asymmetric semiconductor heterostructure with a quantum-well active region is designed. The design of the emitting aperture of the laser chip is optimized to improve the operating characteristics of the laser beam when generating sub-ns optical pulses. It is shown that the transition to a monolithic emitting aperture design reduces the laser pulse turn-on spatial inhomogeneity, which is 90 ps over the entire range of optical powers studied. It is also demonstrated that by increasing the emitting aperture width to 400 μm, laser pulses with a peak power of 39.5 W and a pulse width at full width at half maximum (FWHM) of 120 ps can be generated.