Nanoscopic structural and optical investigations on blue InGaN single quantum wells serving as layers beneath efficient red active layers

In state-of-the-art red InGaN light-emitting diodes (LEDs), an InGaN-based blue single quantum well (SQW) is used as an underlying layer to improve the red emission efficiency. However, the role of blue SQW is not fully understood. This study investigates the structural and optical properties of blue InGaN SQW by atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy under scanning near-field optical microscopy (SNOM). The AFM images reveal deep and shallow V-pits, corresponding to screw and mixed threading dislocations (TDs). The SNOM-PL intensity image illustrates that all the V-pits correspond to dark spots. We also observe dark spots not associated with the V-pits; given the correspondence between the dark spot density and the edge TD density estimated via x-ray diffraction measurement, these dark spots likely originate from edge TDs. Unlike previous studies, we find that TDs act as nonradiative recombination centers (NRCs) in recent blue SQW, most likely because of the reduction of point defects by InGaN/GaN superlattices. Edge, screw, and mixed TDs have nearly the same impact on the integrated PL intensity of the blue InGaN SQW. Given the correlation of dark emission positions between the blue and red emissions in hybrid red InGaN LEDs in our prior study, all the TDs should function as NRCs in the red emission. The comparable dark spot density between the blue and red SQW suggests that blue SQW suppresses the generation of NRCs in red SQW.