Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array

Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual memristor cells and effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) cells by assembling the emerging two-dimensional ferroelectric CuCrP<sub>2</sub>S<sub>6</sub> with MoS<sub>2</sub> and <i>h</i>-BN. The memory cell exhibits high resistance tunability (10<sup>6</sup>), low sneak current (120 fA), and low static power (12 fW). A neuromorphic array with greatly reduced crosstalk is experimentally demonstrated. The nonvolatile resistance switching is driven by electric-field-induced ferroelectric polarization reversal. This van der Waals engineering approach offers a universal solution for creating compact and energy-efficient 2D in-memory computation systems for next-generation artificial neural networks.

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Publication Details

Journal
Nano Letters
Published
2025-02-03
DOI
https://doi.org/10.1021/acs.nanolett.4c06118
Citations
12
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
8.77

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article

Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array

Tao Yang, Kai Liu, Jefferson Zhe Liu, Mario Lanza et al.
12 citations
Nano Letters
Advanced Memory and Neural Computing
8.77
article

Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array

Tao Yang, Kai Liu, Jefferson Zhe Liu, Mario Lanza, Fei Xue, Sebastián Pazos, Cheng Gong, Xixiang Zhang, Yuan Yan, Fernando Aguirre, Yinchang Ma, Chen Liu, Heng Wang, Maolin Chen, Baoyu Wang
article en
12 citations

Abstract

Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual memristor cells and effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) cells by assembling the emerging two-dimensional ferroelectric CuCrP<sub>2</sub>S<sub>6</sub> with MoS<sub>2</sub> and <i>h</i>-BN. The memory cell exhibits high resistance tunability (10<sup>6</sup>), low sneak current (120 fA), and low static power (12 fW). A neuromorphic array with greatly reduced crosstalk is experimentally demonstrated. The nonvolatile resistance switching is driven by electric-field-induced ferroelectric polarization reversal. This van der Waals engineering approach offers a universal solution for creating compact and energy-efficient 2D in-memory computation systems for next-generation artificial neural networks.

Nano LettersVol. 25(6)
The University of Melbourne (AU), National University of Singapore (SG), Zhejiang University of Science and Technology (CN), Georgetown University (US), Edge Technologies (United States) (US), Collaborative Innovation Center of Quantum Matter (CN), Intrinsiq Materials (United Kingdom) (GB), University of Maryland, College Park (US), King Abdullah University of Science and Technology (SA), Zhejiang University (CN)
Georgetown University, National Computational Infrastructure, National University of Singapore, University of Melbourne, National Natural Science Foundation of China, King Abdullah University of Science and Technology, Zhejiang University, National Cancer Institute, Natural Science Foundation of Zhejiang Province
Affordable and clean energy
Openalex Percentile: Top 2%
Advanced Memory and Neural Computing
8.77
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