Integrated High-Gain Broadband Low Noise Amplifier Receiver with Ultra-Wideband Antenna

This article presents RF integrated receiver consists of high-gain broadband low noise amplifier (LNA) with balun, Gm-C band-pass filter, and ultra-wideband (UWB) antenna with band-notch design. The proposed wireless integrated CMOS design and analysis are chosen as the receiver of RF circuits to enhance conversion gain low noise amplifier while maintaining high-flatness at broadband. The integrated circuit is fabricated in tsmc <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.18-\mu \mathrm{m}$</tex> process. From 3 to 6 GHz, the measured results exhibit high-gain of 16.2 to 17.4dB, noise figure of 4.0dB to 4.4dB with Input-referred third-order intercept point (IIP3) of −20.2 dBm while consuming 14 mA from a 1.8V supply. The measured results exhibit high-gain of 11.7 dB to 13.7 dB, noise figure of 4.6 dB to 4.9 dB with Input-referred third-order intercept point (IIP<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) of −20.9 dBm while consuming 6 mA from a 1.0V supply, respectively.