First-principles study on structural and electronic properties of MPX3 (M = Zn, Cd; X = S, Se) compounds
Metal phosphorous trichalcogenides have been attracting significant scientific interest due to their unique physical properties and promising prospects for device applications. In this work, we perform systematical first-principles calculations to study the structural and electronic properties of MPX3 (M = Zn, Cd; X = S, Se) compounds in C2/m (α-phase) and R3̄ (β-phase) symmetries. The sequence of energetic stabilities of this series of compounds is revealed by total energy calculations, and their dynamical stabilities are confirmed by phonon band spectrum calculations. Electronic band structure calculations show that these MPX3 compounds are all indirect-gap semiconductors, and the bandgaps in sulfides (3.13–3.39 eV) are larger than those in selenides (2.14–2.27 eV). The orbital projected density of states calculations show that the electronic states in these compounds around the Fermi level are all mainly contributed by the p orbitals of chalcogen atoms and phosphorus atoms. Our work has given a systematical understanding of this series of MPX3 compounds, which will provide guidance for future theoretical and experimental studies in related fields.
Authors
- Zeshan Zada
- Y. T. Li (ORCID: https://orcid.org/0000-0002-9791-6220)
- Ye Tao (ORCID: https://orcid.org/0000-0003-4814-767X)
- Jian-Tao Wang (ORCID: https://orcid.org/0000-0002-0786-1212)
- Kun Bu (ORCID: https://orcid.org/0000-0003-3520-2692)
- Xujing Li (ORCID: https://orcid.org/0000-0001-6147-6844)
Institutions
- Shandong University of Technology (CN)
- Chinese Academy of Sciences (CN)
- Physical Sciences (United States) (US)
- Songshan Lake Materials Laboratory (CN)
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- AIP Advances
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1063/5.0235822
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province
- National Key Research and Development Program of China
- Key Research Program of Frontier Science, Chinese Academy of Sciences