Structural and Spectroscopic Properties of Hydrothermally Synthesized α-GaO(OH) Structures: Impact of Annealing Temperatures

This work investigated the structural and spectroscopic properties of α -GaO(OH) prepared via a hydrothermal method. The film was heat treated at three different temperatures, which are 350, 450, and 550 °C. The films were characterized by X-ray diffraction, field-emission scanning electron microscopy, UV–vis spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The morphology of the prepared α -Ga 2 O 3 films shows rhombus nanorod structure, which is a favorable morphology for advanced applications. Raman spectroscopy confirmed the rhombus structure of α -Ga 2 O 3 nanocrystals at lower temperatures and indicated adjustments in the lattice vibrations and crystal structure with increasing annealing temperature up to 550 °C. The optical band gap of α -Ga 2 O 3 was estimated using diffused reflectance and Tauc plot analysis. The results showed that the band gap decreased from 5.24 eV to 4.58 eV with increased heat treatment due to reduced defects and improved crystalline structure.

Authors

Publication Details

Journal
ECS Journal of Solid State Science and Technology
Published
2025-02-01
DOI
https://doi.org/10.1149/2162-8777/adb17e
Citations
4
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
1.71

Funders

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article

Structural and Spectroscopic Properties of Hydrothermally Synthesized α-GaO(OH) Structures: Impact of Annealing Temperatures

Azman Jalar, Naif H. Al-Hardan, Muhammad Azmi Abdul Hamid, Alaa Omar Balkhtb
4 citations
ECS Journal of Solid State Science and Technology
Ga2O3 and related materials
1.71
article

Structural and Spectroscopic Properties of Hydrothermally Synthesized α-GaO(OH) Structures: Impact of Annealing Temperatures

Azman Jalar, Naif H. Al-Hardan, Muhammad Azmi Abdul Hamid, Alaa Omar Balkhtb
article en
4 citations

Abstract

This work investigated the structural and spectroscopic properties of α -GaO(OH) prepared via a hydrothermal method. The film was heat treated at three different temperatures, which are 350, 450, and 550 °C. The films were characterized by X-ray diffraction, field-emission scanning electron microscopy, UV–vis spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The morphology of the prepared α -Ga 2 O 3 films shows rhombus nanorod structure, which is a favorable morphology for advanced applications. Raman spectroscopy confirmed the rhombus structure of α -Ga 2 O 3 nanocrystals at lower temperatures and indicated adjustments in the lattice vibrations and crystal structure with increasing annealing temperature up to 550 °C. The optical band gap of α -Ga 2 O 3 was estimated using diffused reflectance and Tauc plot analysis. The results showed that the band gap decreased from 5.24 eV to 4.58 eV with increased heat treatment due to reduced defects and improved crystalline structure.

ECS Journal of Solid State Science and TechnologyVol. 14(2)
Pusat Pengurusan Penyelidikan dan Instrumentasi
Openalex Percentile: Top 17%
Ga2O3 and related materials
1.71
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Structural and Spectroscopic Properties of Hydrothermally Synthesized α-GaO(OH) Structures: Impact of Annealing Temperatures — Azman Jalar, Naif H. Al-Hardan, et al. · ECS Journal of Solid State Science and Technology (2025) | TGRS Research Map | TGRS