Design of Broadband Modified‐Uni‐Traveling‐Carrier Photodiodes with 3 dB Bandwidth of 171 GHz

In this research, modified‐uni‐traveling‐carrier photodiodes for broadband applications are designed using simulations based on the energy‐balance model. Previously reported experimental results are used to validate this physical model. By optimizing the doping concentration of the cliff layer, the thickness of the absorption layer, and introducing inductive peaking technology in coplanar waveguide (CPW) electrodes, 3 dB bandwidths of 171 and 119 GHz are achieved for photodiodes with diameters of 3 and 5 um, respectively, with responsivities of 0.125 and 0.134 A W −1 . When the incident light intensity is 4 × 10 5 W cm −2 , the maximum RF output power of 3 μm diameter photodiode is −4.9 dBm at 171 GHz, and 3.57 dBm at 119 GHz for 5 μm diameter photodiode.