A 1–21-GHz, 1.95–3.1-dB NF Ultra-Wideband LNA With <i>Gₘ</i> -Assisted-Feedback Noise Suppression Achieving 140-Gb/s Data Rate in 40-nm CMOS
This article presents an ultra-wideband (UWB) low noise amplifier (LNA) with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$g_{m}$ </tex-math></inline-formula>-assisted-feedback noise suppression technique for multi-band wireless communication. Compared with the traditional resistive feedback (RF) and source-follower feedback wideband LNAs, the proposed LNA blocks the noise current from the feedback resistor with a simple additional <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$g_{m}$ </tex-math></inline-formula>-cell, thus alleviating the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$S_{11}$ </tex-math></inline-formula>-NF design tradeoff in the traditional structures. A source coupling transformer is also utilized to create <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$g_{m}$ </tex-math></inline-formula>-boosting and maintain a wideband flat gain. Fabricated in a 40-nm bulk CMOS process, the LNA prototype achieves a measured operating bandwidth (BW) of 1–21 GHz, measured NF of 1.95–3.1 dB, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$S_{21}$ </tex-math></inline-formula> of 20.6–22.4 dB, while consuming 21.6 mA from a 1.2-V power supply. It also supports UWB modulation signals with a data rate of 140 Gb/s. The proposed LNA reports the lowest NF among the recently reported bulk CMOS UWB LNAs.
Authors
- Wei Li (ORCID: https://orcid.org/0000-0001-9177-4551)
- Hongtao Xu (ORCID: https://orcid.org/0000-0003-1852-4112)
- Yun Yin (ORCID: https://orcid.org/0000-0002-3911-8079)
- Yue Lin (ORCID: https://orcid.org/0000-0001-7974-9062)
- Yunhao Li
- Yun Wang (ORCID: https://orcid.org/0000-0001-7773-1619)
- Wen Zuo (ORCID: https://orcid.org/0009-0006-9028-8379)
- S.K. Han (ORCID: https://orcid.org/0009-0003-9638-0895)
Institutions
- Fudan University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Journal
- IEEE Journal of Solid-State Circuits
- Published
- 2025-01-29
- DOI
- https://doi.org/10.1109/jssc.2025.3531235
- Citations
- 2
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.46