A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High Sensitivity
A novel AlGaN/GaN Schottky barrier diode (SBD) thermal sensor featuring a recessed anode and a thin Al0.25Ga0.75N barrier layer is fabricated, which is demonstrated to have ultralow power, excellent linearity, and high sensitivity for thermal sensing. The AlGaN layer thickness is employed to trade-off the tunneling current proportion against the 2-D electron gas (2DEG) density for the thermionic emission (TE)-dominated electron transportation with better linearity and high sensitivity of thermal sensing at ultralow power. A sensitivity of 1.39 mV/K with a linearity of 0.995 operating at 0.082–0.324 V for a constant current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{-{7}}$ </tex-math></inline-formula> A is revealed. The proposed SBD sensor shows the great potential application for on-chip, low-power, and high-performance thermal sensing in monolithic AlGaN/GaN heterostructure-based power ICs.
Authors
- Robert Sokolovskij (ORCID: https://orcid.org/0000-0003-0447-9672)
- Qiaoyu Hu (ORCID: https://orcid.org/0009-0001-9121-5212)
- Fangzhou Du (ORCID: https://orcid.org/0000-0002-8151-8092)
- Chenkai Deng (ORCID: https://orcid.org/0000-0001-9585-353X)
- Kangyao Wen (ORCID: https://orcid.org/0000-0002-2626-945X)
- Wenmao Li (ORCID: https://orcid.org/0000-0002-9638-8489)
- Jiaqi He (ORCID: https://orcid.org/0000-0001-8155-8302)
- Yu-Long Jiang (ORCID: https://orcid.org/0000-0001-8521-5075)
- Yang Jiang (ORCID: https://orcid.org/0000-0002-5430-2931)
- Qing Wang (ORCID: https://orcid.org/0000-0002-5478-5662)
- Hongyu Yu (ORCID: https://orcid.org/0000-0002-5756-868X)
- Yuhan Sun (ORCID: https://orcid.org/0009-0000-4441-4828)
Institutions
- Fudan University (CN)
- Southern University of Science and Technology (CN)
- Shanghai Fudan Microelectronics (China) (CN)
- State Key Laboratory of ASIC and System
Publication Details
- Journal
- IEEE Sensors Journal
- Published
- 2025-01-29
- DOI
- https://doi.org/10.1109/jsen.2025.3532657
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 5.03
Funders
- Natural Science Foundation of Shenzhen City
- Shenzhen Government
- National Natural Science Foundation of China
- Guangdong Science and Technology Department