Deep-Ultraviolet AlN Metalens with Imaging and Ultrafast Laser Microfabrication Applications

Deep-ultraviolet (DUV) light is essential for applications including fabrication, molecular research, and biomedical imaging. Compact metalenses have the potential to drive further innovation in these fields, provided they utilize a material platform that is cost-effective, durable, and scalable. In this work, we present aluminum nitride (AlN) metalenses as an efficient solution for DUV applications. These metalenses, with a thickness of only 380 nm, deliver DUV focusing and imaging capabilities close to the theoretical diffraction limit. Leveraging their robustness to intense ultrafast laser irradiation, we demonstrate successful DUV ultrafast laser direct writing of microstructures on a polymer film and silicon substrate. These results underscore the significant promise of advancing photonic technologies in this critical wavelength regime.

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Publication Details

Journal
Nano Letters
Published
2025-01-29
DOI
https://doi.org/10.1021/acs.nanolett.4c05552
Citations
23
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
28.94

Funders

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article

Deep-Ultraviolet AlN Metalens with Imaging and Ultrafast Laser Microfabrication Applications

Min‐Hsiung Shih, C. C. Chiang, Kuniaki Konishi, Haruyuki Sakurai et al.
23 citations
Nano Letters
GaN-based semiconductor devices and materials
28.94
article

Deep-Ultraviolet AlN Metalens with Imaging and Ultrafast Laser Microfabrication Applications

Min‐Hsiung Shih, C. C. Chiang, Kuniaki Konishi, Haruyuki Sakurai, Bo-Ray Lee, Yu Jie Wang, Kuan-Heng Chen, Ray‐Hua Horng, Chia‐Yen Huang, Ming Lun Tseng, Hsueh-Chih Chang, Yu Chieh Peng, Yu Hung Lin, Ruei‐Tzu Duh
article en
23 citations

Abstract

Deep-ultraviolet (DUV) light is essential for applications including fabrication, molecular research, and biomedical imaging. Compact metalenses have the potential to drive further innovation in these fields, provided they utilize a material platform that is cost-effective, durable, and scalable. In this work, we present aluminum nitride (AlN) metalenses as an efficient solution for DUV applications. These metalenses, with a thickness of only 380 nm, deliver DUV focusing and imaging capabilities close to the theoretical diffraction limit. Leveraging their robustness to intense ultrafast laser irradiation, we demonstrate successful DUV ultrafast laser direct writing of microstructures on a polymer film and silicon substrate. These results underscore the significant promise of advancing photonic technologies in this critical wavelength regime.

Nano LettersVol. 25(8)
ITRI International (US), National Yang Ming Chiao Tung University (TW), Integrated Optoelectronics (Norway) (NO), Research Center for Applied Science, Academia Sinica (TW), Photonic Science (United Kingdom) (GB), Industrial Technology Research Institute (TW), The University of Tokyo (JP), Academia Sinica (TW)
Ministry of Education, Culture, Sports, Science and Technology, Academia Sinica, Shanghai Educational Development Foundation, Ministry of Education, India, Thailand Science Research and Innovation, National Science and Technology Council, Japan Society for the Promotion of Science
Openalex Percentile: Top 0%
GaN-based semiconductor devices and materials
28.94
DOIOpen Access PDFOpenAlex
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