Design and testing of a pulsed laser system for single event effects analysis on semiconductor devices

Single event upsets (SEUs) are a critical concern for reliability in semiconductor devices, particularly as technology nodes shrink and devices become more susceptible to cosmic rays and other radiation sources. Understanding and mitigating these effects are crucial for ensuring the reliability of electronic systems. By leveraging pulsed laser charge injection, researchers can achieve results comparable to traditional methods like heavy ion testing but at a lower cost and with better control over spatial and temporal parameters. The photogeneration effect in semiconductor devices due to single photon absorption and two-photon absorption is introduced and the test system designed to make use of both type of charge photogeneration is implemented. The design and development of the pulsed laser system at the Saskatchewan Structural Sciences Centre (SSSC) is described. The system's capabilities, such as precise control over pulse parameters and spatial targeting, make it a valuable tool for single event effect (SEE) analysis. The testing of a static random access memory (SRAM) using this newly developed system provides valuable insights into the device's behavior under radiation-induced faults. By quantifying overall error rates, including multiple-bit errors and faults in memory and control circuitry, researchers can assess the device's susceptibility to SEUs. Comparing the pulsed laser results of SRAM testing with those obtained from heavy ion testing demonstrates the effectiveness of the pulsed laser system. Overall, the new and unique Pulsed Laser System at the SSSC represents a significant advancement in SEE testing capability. Its ability to provide results comparable to traditional methods while offering greater accessibility and control has the potential to drive further innovation in the field of radiation effects analysis in semiconductor devices.