Enhancing the RF performance at the nanoscale using double gate ferroelectric field effect transistor

Abstract This work presents a proposed double-gate ferroelectric field-effect transistor with junctionless accumulation mode. Simulations with the TCAD Silvaco ATLAS simulator evaluate its characteristics regarding RF/analog needs for different channel lengths. The DG-FeFET configuration generates significant analog metrics, including transfer characteristics, output characteristics, transconductance (g m ), switching ratio, intrinsic gain (A V ), output conductance (g d ), cut-off frequency and early voltage (V EA ) etc Using the proposed structure, the parameters like g m , I ON /I OFF , Av, and TGF, etc have improved by more than 50%, 16–82%, 52.2%, and 50.83%, respectively. As a result, it has been discovered that, in comparison to junctionless accumulation mode ferroelectric FET (JAM-FE-FET) and junctionless ferroelectric FET (JL-FE-FET), the double gate ferroelectric FET (DG-FeFET) topology enhances analog and RF performance. Because of this, the DG-FeFET device shown here is an excellent choice for high-frequency systems.