Lowering the coercive field of van der Waals ferroelectric NbOI2 with photoexcitation

Polarization switching in van der Waals ferroelectric materials driven by an electric field remains robust even at the atomic layer limit, paving the way for advances in the miniaturization and integration of ferroelectric devices. Thus, understanding the modulation of ferroelectric properties in two-dimensional ferroelectric materials is essential for their efficient nanoscale applications. NbOI2, a recently confirmed van der Waals ferroelectric, offers an ideal platform for investigating in-plane spontaneous polarization at the nanoscale. We explored the influence of laser excitation on the ferroelectric polarization properties of NbOI2. In multilayer NbOI2 devices with in-plane configurations, no significant current signals were detected along the c-axis or b-axis (the ferroelectric polarization axis) in the absence of illumination. However, under laser excitation, the material exhibited clear hysteresis loop behavior along both the c-axis and b-axis, indicating that laser excitation effectively reduces the coercive voltage. Furthermore, at the same excitation wavelength, the current peak along the c-axis was larger, with more pronounced hysteresis loops. Our experimental findings demonstrate that laser excitation can lower the coercive field in multilayer NbOI2 and induce different electrical hysteresis behavior along different crystallographic orientations, providing valuable insights for the development of NbOI2-based optoelectronic devices.

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Publication Details

Journal
Applied Physics Letters
Published
2025-01-27
DOI
https://doi.org/10.1063/5.0240482
Citations
3
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
1.55

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article

Lowering the coercive field of van der Waals ferroelectric NbOI2 with photoexcitation

Hang Gao, Qinsheng Wang, Zhiwei Wang, Qinghang Liu et al.
3 citations
Applied Physics Letters
Ferroelectric and Piezoelectric Materials
1.55
article

Lowering the coercive field of van der Waals ferroelectric NbOI2 with photoexcitation

Hang Gao, Qinsheng Wang, Zhiwei Wang, Qinghang Liu, Deng Hu
article en
3 citations

Abstract

Polarization switching in van der Waals ferroelectric materials driven by an electric field remains robust even at the atomic layer limit, paving the way for advances in the miniaturization and integration of ferroelectric devices. Thus, understanding the modulation of ferroelectric properties in two-dimensional ferroelectric materials is essential for their efficient nanoscale applications. NbOI2, a recently confirmed van der Waals ferroelectric, offers an ideal platform for investigating in-plane spontaneous polarization at the nanoscale. We explored the influence of laser excitation on the ferroelectric polarization properties of NbOI2. In multilayer NbOI2 devices with in-plane configurations, no significant current signals were detected along the c-axis or b-axis (the ferroelectric polarization axis) in the absence of illumination. However, under laser excitation, the material exhibited clear hysteresis loop behavior along both the c-axis and b-axis, indicating that laser excitation effectively reduces the coercive voltage. Furthermore, at the same excitation wavelength, the current peak along the c-axis was larger, with more pronounced hysteresis loops. Our experimental findings demonstrate that laser excitation can lower the coercive field in multilayer NbOI2 and induce different electrical hysteresis behavior along different crystallographic orientations, providing valuable insights for the development of NbOI2-based optoelectronic devices.

Applied Physics LettersVol. 126(4)
Beijing Institute of Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 20%
Ferroelectric and Piezoelectric Materials
1.55
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Lowering the coercive field of van der Waals ferroelectric NbOI2 with photoexcitation — Hang Gao, Qinsheng Wang, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS