A 6.4Gb/s/pin HBM3 Digital PHY with Low-Power, Area-Efficient Techniques for Chiplet-Based AI processors in 12-nm CMOS
Since the emergence of artificial neural networks, we are currently experiencing a wave of transformation centered around generative Al models such as ChatGPT, Gemini, and Copilot. In response to these changes, there is a growing demand for low-power and highspeed memory to facilitate the real-time processing of large-scale data such as images, videos, and texts. In the industry, high-performance AI chips utilizing high-bandwidth memory (HBM) are being developed [1], [2]. Particularly, next-generation AI processors tend to adopt a chiplet-based architecture consisting of HBM and NPUs [3]–[5]. With improvements in HBM performance, the operating frequency of HBM3 has increased by approximately three times compared to the previous HBM2E, rising from 1.2 GHz to 3.2 GHz. As a result, it has become crucial to implement a digital physical layer (digital PHY) capable of processing data at high speeds.
Authors
- Jaehoon Chung (ORCID: https://orcid.org/0000-0003-3278-9213)
- Juyeob Kim
- Yi-Gyeong Kim
- Jinho Han (ORCID: https://orcid.org/0000-0002-0655-320X)
- Sujin Park (ORCID: https://orcid.org/0009-0007-7192-3389)
- Jaewoong Choi (ORCID: https://orcid.org/0000-0002-2640-5933)
- Minhyung Cho
- Young-Deuk Jeon
Institutions
- Electronics and Telecommunications Research Institute (KR)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/a-sscc60305.2024.10848683
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00