A -60 to 145 °C, 216 fJ·K2 Energy-Efficient MOS-Based Temperature Sensor Achieving 71.8 mK Resolution
Energy-efficient temperature sensors are essential for on-chip temperature monitoring. To measure temperature, they convert temperature into electrical signals using devices such as MOSFETs [1], [2], BJTs [3], and resistors [4], [5]. MOS-based temperature sensors have low energy consumption because of their compact structures, but the energy efficiency has been relatively worse compared to recent resistor-based sensors. However, this low energy efficiency is not due to the intrinsic limitation of MOS devices. This paper optimizes the temperature conversion method and overall sensor design to improve the energy efficiency of MOS-based temperature sensors.
Authors
- Kyounghun Kang (ORCID: https://orcid.org/0000-0001-7307-1457)
- Wanyeong Jung (ORCID: https://orcid.org/0000-0002-5671-1341)
- Minkyu Yang (ORCID: https://orcid.org/0000-0002-2915-1481)
- Jeongmyeong Kim (ORCID: https://orcid.org/0000-0002-6498-1309)
- Jooeun Kim (ORCID: https://orcid.org/0000-0002-2590-6795)
Institutions
- Korea Advanced Institute of Science and Technology (KR)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/a-sscc60305.2024.10849025
- Citations
- 2
- Primary Topic
- Analytical Chemistry and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.58