Low-Energy RISC-V Core in 18nm FD-SOI CMOS for Embedded Edge-Computing

This paper presents the enhancements brought to AsteRISC, a highly modulable RISC- V core. We study the energy impact of the M extension and show that data gating, multiple-cycle constraints and frequency scaling help in reducing by a factor 2 the energy consumption of the resulting M -extended core. The core implementation, done in 18nm FD-SOI technology, has a lower dynamic power than Riscy and a commercialized reference core but also a better energy efficiency. Among the different implementations, the most efficient reached a 1.37µ W energy consumption post Signoff with a 727 CoreMark score at 0.77V.

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Published
2024-11-18
DOI
https://doi.org/10.1109/icecs61496.2024.10848750
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
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article

Low-Energy RISC-V Core in 18nm FD-SOI CMOS for Embedded Edge-Computing

Camille Leroux, Sylvain Clerc, Christophe Jégo, Filipe Pouget
Advancements in Semiconductor Devices and Circuit Design
article

Low-Energy RISC-V Core in 18nm FD-SOI CMOS for Embedded Edge-Computing

Camille Leroux, Sylvain Clerc, Christophe Jégo, Filipe Pouget
article en

Abstract

This paper presents the enhancements brought to AsteRISC, a highly modulable RISC- V core. We study the energy impact of the M extension and show that data gating, multiple-cycle constraints and frequency scaling help in reducing by a factor 2 the energy consumption of the resulting M -extended core. The core implementation, done in 18nm FD-SOI technology, has a lower dynamic power than Riscy and a commercialized reference core but also a better energy efficiency. Among the different implementations, the most efficient reached a 1.37µ W energy consumption post Signoff with a 727 CoreMark score at 0.77V.

Université de Bordeaux (FR), STMicroelectronics (France) (FR), Laboratoire de l'Intégration du Matériau au Système (FR), Institut Polytechnique de Bordeaux (FR)
Affordable and clean energy
Openalex Percentile: Top 76%
Advancements in Semiconductor Devices and Circuit Design
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Low-Energy RISC-V Core in 18nm FD-SOI CMOS for Embedded Edge-Computing — Camille Leroux, Sylvain Clerc, et al. · (2024) | TGRS Research Map | TGRS