Process Variability Impact on 7 nm FinFET Radiation Hardening Inverters
This work evaluates the impact of process variability on circuit-level hardening techniques applied to inverters designed with FinFET devices, including transistor sizing information. The results highlight ongoing challenges in designing robust circuits under process variability, particularly in near-threshold operation. Additionally, this study revisits results previously discussed in bulk CMOS technology, comparing them with the impact of work-function fluctuations on FinFET devices. The findings demonstrate that the Schmitt Trigger technique exhibited the highest robustness against significant process variability, showing relatively favorable performance in terms of delay and energy compared to other techniques.
Authors
- Cristina Meinhardt (ORCID: https://orcid.org/0000-0003-1088-1000)
- Mirella Dias (ORCID: https://orcid.org/0000-0002-2109-3563)
Institutions
- Universidade Federal de Santa Catarina (BR)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/icecs61496.2024.10848717
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Coordenação de Aperfeiçoamento de Pessoal de Nível Superior