High-Efficiency Multi-Resonant Switched Capacitor Converter with GaN HEMTs

With respect to conventional SwitchedCapacitor Converters (SCC), the Resonant Switched-Capacitor Converter (ReSCC) topology incorporates a resonance loop to achieve Zero Voltage Switching (ZVS) to reduce losses. However, ReSCCs face challenges due to their sensitivity to parameter values in the resonance loop. In this context, MultiResonant Switched-Capacitor Converters (MuReSCC) emerge as a solution, addressing these issues without requiring complex sensing or trimming circuitry. By introducing a second resonance loop, this topology ensures robust immunity to parameter variations. This paper introduces the design of a DCDC Multi-Resonant Switched-Capacitor Converter (MuReSCC) utilizing GaN devices and a planar PCB inductor. Simulations confirm the operation up to 140 W. Experimental measurements demonstrate immunity to component variations, with an efficiency decrease of less than 1 % for parametric variations up to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{3 0 \%}$</tex> (compared to over <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{1 5 \%}$</tex> for ReSCC) with a peak efficiency of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{9 8 \%}$</tex> measured at 35 W due to measurement equipment limitations.