A Simulation Study on the Performance Characteristics of 3D Crystalline Silicon (c-Si) Solar Cells

One of the most popular materials used is the wafer-based crystalline silicon (c-Si) solar cells that are dominant in the technology of the global PV market. In this paper, a 3D finite element method in COMSOL Multiphysics was used to simulate a crystalline silicon solar cell to investigate the impact absorber layer while keeping the electron and hole transport layer constant. The Variation of the c-Si_absorber layer thickness has influenced variation of output results based on the changed in the absorber layer. An efficiency of 25% at a temperature of 300K with a minimum short circuit current density of 18mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a maximum short circuit current of 36.2mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, where a power output of 9.5mW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 19.4mW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> respectively.