An All-digital, 3.68 mV/LSB Voltage Sensor based Droop Prediction and Fast Mitigation System in 28nm CMOS
In digital SoCs, voltage droop caused by work-load variations can reduce the voltage by over 100 mV in about 10 ns [1]. However, to capture the details during the droop as shown in Fig. 1 top, previous voltage sensors still face challenges: 1) Their resolution is limited by the sensitivity of the standard cells in Voltage-to-Time Converter (VTC); 2) Low sampling rate and VTC is affected by PVT (Process, Voltage-nonlinear, Temperature) variations [2–5]. On the other hand, traditional LDOs struggle to effectively mitigate droop due to the loop-latency and the fine regulation strategy [6–10]. Current injection techniques have been proposed to address the droop issue, but they are still limited by the detection and control latency, and it is challenging to determine the precise amount of current to inject.
Authors
- Weiwei Shan (ORCID: https://orcid.org/0000-0001-5520-1326)
- Kaize Zhou (ORCID: https://orcid.org/0009-0002-8656-5442)
- Yan Lu (ORCID: https://orcid.org/0000-0002-2530-0726)
- Zhuo Chen (ORCID: https://orcid.org/0000-0003-1597-9058)
- Tuo Li (ORCID: https://orcid.org/0000-0003-2291-579X)
- Yuxuan Du (ORCID: https://orcid.org/0000-0002-1193-9756)
- Lishuo Deng (ORCID: https://orcid.org/0009-0009-2394-7663)
Institutions
- University of Macau (MO)
- Cloud Computing Center (CN)
- Southeast University (CN)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/a-sscc60305.2024.10848677
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities