A 19.58-to-21.38-GHz Low-Power Quad-Core VCO with Compact 3<sup>rd</sup>-Order Q-boost Inductors Achieving -191.8-dBc/Hz FoM and -205.4-dBc/Hz FoM<sub>A</sub>

In the Internet-of-Things (loT) applications, such as human sensors, robots, and vehicles, which are battery-dependent, optimal mm-Wave-based sensing requires a frequency source with low power consumption, miniaturization, and high signal-to-noise ratio (SNR) [1]. This necessitates a low-jitter and low-power phase-locked loop (PLL). To minimize jitter within a given PLL power budget, balancing power allocation between the loop and the voltage control oscillators (VCO) is required [2]. Since the thermal region phase noise (PN) of VCO dictates the out-band PN of the PLL, it is essential to suppress thermal region PN with a low VCO power budget. Meanwhile, compact size is also significant for low-cost loT applications, hence requiring inductor shrinkage. However, optimizing PN, power, and area simultaneously in traditional single-core VCOs is challenging [3–5], mainly owing to the design trade-off of the inductor between inductance, Q factor, and area. As illustrated in Fig. 1 (middle), designing an inductor with a large L and high Q is highly desirable because the former helps to reduce VCO power while the latter is essential for low PN. Two widely used inductor topologies are presented in Fig. 1 (bottom). The single-coil inductor exhibits a high Q because the large distance between the two sides of the coil causes negligible self-canceling; yet, it is area-inefficient for large L designs. The multi-coil inductor offers a high L with a compact size but suffers from degraded Q caused by the severe self-canceling and parasitic effects, due to the narrow distance between the sides of the coils.

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Publication Details

Published
2024-11-18
DOI
https://doi.org/10.1109/a-sscc60305.2024.10849131
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.42

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article

A 19.58-to-21.38-GHz Low-Power Quad-Core VCO with Compact 3rd-Order Q-boost Inductors Achieving -191.8-dBc/Hz FoM and -205.4-dBc/Hz FoMA

Xiangjian Kong, Shuai Deng, Zhao Zhang
2 citations
Semiconductor materials and devices
0.42
article

A 19.58-to-21.38-GHz Low-Power Quad-Core VCO with Compact 3rd-Order Q-boost Inductors Achieving -191.8-dBc/Hz FoM and -205.4-dBc/Hz FoMA

Xiangjian Kong, Shuai Deng, Zhao Zhang
article en
2 citations

Abstract

In the Internet-of-Things (loT) applications, such as human sensors, robots, and vehicles, which are battery-dependent, optimal mm-Wave-based sensing requires a frequency source with low power consumption, miniaturization, and high signal-to-noise ratio (SNR) [1]. This necessitates a low-jitter and low-power phase-locked loop (PLL). To minimize jitter within a given PLL power budget, balancing power allocation between the loop and the voltage control oscillators (VCO) is required [2]. Since the thermal region phase noise (PN) of VCO dictates the out-band PN of the PLL, it is essential to suppress thermal region PN with a low VCO power budget. Meanwhile, compact size is also significant for low-cost loT applications, hence requiring inductor shrinkage. However, optimizing PN, power, and area simultaneously in traditional single-core VCOs is challenging [3–5], mainly owing to the design trade-off of the inductor between inductance, Q factor, and area. As illustrated in Fig. 1 (middle), designing an inductor with a large L and high Q is highly desirable because the former helps to reduce VCO power while the latter is essential for low PN. Two widely used inductor topologies are presented in Fig. 1 (bottom). The single-coil inductor exhibits a high Q because the large distance between the two sides of the coil causes negligible self-canceling; yet, it is area-inefficient for large L designs. The multi-coil inductor offers a high L with a compact size but suffers from degraded Q caused by the severe self-canceling and parasitic effects, due to the narrow distance between the sides of the coils.

Chinese Academy of Sciences (CN), Institute of Semiconductors (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 35%
Semiconductor materials and devices
0.42
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