A Novle Junctionless 4H-SiC Trench MOSFET with Improved Switching and Self-Heating Performances

In this work, a novel 4H-SiC junctionless power MOSFET is investigated through a circuit level analysis using Atlas mixed mode module in order to assess its performances for power electronics applications. More specifically, the device switching performances are analyzed in a circuitry related to an inductive load. Moreover, double pulse testing (DPS) is performed to show the improved device switching losses, and the self-heating effect on the drain current of both the proposed device and its conventional counterpart is assessed. Our findings show that the proposed device rise time is enhanced by 33 %, and its switching losses are reduced by 29 % compared to its conventional counterpart, which reduces the self-heating effect due to switching losses. Furthermore, it has been shown that the proposed device exhibits a lower reduction in its drain current due to self-heating, namely 25 %, compared to 35 % reduction in the drain current of its conventional counterpart, which reduces the self-heating effect due to conduction losses by on-resistance increase. Most importantly, the proposed junctionless power MOSFET is characterized by a low fabrication cost. Thus, we consider that it has the potential for the advancement of more cost-effective thermal solutions for power electronics applications.