Investigating High-Frequency Memristor-Based Backscattering Circuits

This paper investigates memristor-based radiofrequency (RF) backscattering systems, exploring the feasibility of using memristors as the core component in RF backscattering applications. The research aims to exploit the memory properties of non-volatile memristors to design novel high-frequency circuits capable of modulating backscattered signals without employing RF transistors. Utilizing the TaOx-based nanoscale memristor model developed by HP Labs, this study conducts a preliminary numerical investigation. The focus is on introducing a novel architecture and exploring the class of RF signals under which memristors can function effectively as backscatter devices. In this regard, the paper gives preliminary indications that can be properly used to address the design of novel memristor-based backscattering circuits.