Aerosol Assisted Chemical Vapor Deposition of Copper Sulfide films with sensitivity to NO2

Metal chalcogenides (MC), such as copper sulfide (Cu2S), have attracted significant interest among researchers due to their use in solar cells, gas sensing technology, and energy storage devices. Previous studies have explored the deposition of MC thin films employing physical or chemical methods. These approaches typically utilize a variety of precursors. However, single source precursor (SSPs) complexes offer advantages due to their simplified pathways for the MC synthesis. Hence, this works reports the synthesis of copper sulfide thin films (Cu2S) from an experimental SSPs copper complex based on organochalcogenophosphorus ligand. The films were processed via Aerosol Assisted Chemical Vapor Deposition (AACVD) at 400 ºC and 450 ºC. SEM of the films demonstrated granular- or sheet-like morphology when deposited at 400 ºC or 450 ºC, respectively. EDX indicated a Cu/S ratio of 2 (anal. calc. for Cu2S: Cu 39.9 and S 20.1 at%; found Cu 41.3 and S 20.6 at%). XRD results shows the films are crystalline and consistent with a tetragonal phase of Cu2S (ICDD card nº 04-024- 2237). Light activated test upon NO2 showed better responses for the Cu2S deposited at 450 ºC as compared to those deposited at 400 ºC.