Enhancement of the photoelectrochemical performance of bismuth vanadate ( <scp> BiVO <sub>4</sub> </scp> ) photoanode by building a W: <scp> BiVO <sub>4</sub> </scp> /Mo: <scp> BiVO <sub>4</sub> </scp> Homojunction
Abstract We fabricated a highly efficient bismuth vanadate (BiVO 4 )‐based photoanode by constructing a W:BiVO 4 /Mo:BiVO 4 homojunction configuration. It was confirmed that, in the case of Type‐II junction, the photocurrent density was drastically enhanced and the onset potential was cathodically shifted. The origins of the enhanced photo‐electrochemical performance could be attributed to the improvement of the charge separation efficiency, which resulted from both the built‐in electric field and Fermi level unpinning, achieved by the homojunction and Mo doping, respectively.
Authors
- Zhenhua Pan (ORCID: https://orcid.org/0000-0001-9838-7685)
- Kenji Katayama (ORCID: https://orcid.org/0000-0003-3278-6485)
- Woon Yong Sohn (ORCID: https://orcid.org/0000-0003-4881-2350)
- Aram Hong
- Seung Hyeon Jeong
- Ji Hyun Kim (ORCID: https://orcid.org/0000-0002-3984-0686)
Institutions
- Chungbuk National University (KR)
- University of Hyogo (JP)
- Chuo University (JP)
Publication Details
- Journal
- Bulletin of the Korean Chemical Society
- Published
- 2025-01-27
- DOI
- https://doi.org/10.1002/bkcs.12943
- Citations
- 2
- Primary Topic
- Advanced Photocatalysis Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- Ministry of Education
- Ministry of Science and ICT, South Korea