Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering‐type scanning near‐field optical microscope

Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excitation and emission through interaction with the nanofocus of the tip resulting in a subdiffraction limited tip-enhanced PL hotspot. On the other hand, we show that indirect excitation and emission via scattering from the tip significantly increases the recorded PL intensity. This demonstrates that the tip-assisted PL (TAPL) process efficiently guides the generated light to the detector. We apply the TAPL method to map the in-plane dipole orientations of the hBN color centers on the nanoscale. This work promotes the widely available s-SNOM approach to applications in the quantum domain including characterization and optical control.

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Publication Details

Journal
Nanophotonics
Published
2025-02-01
DOI
https://doi.org/10.1515/nanoph-2024-0554
Citations
7
Primary Topic
Near-Field Optical Microscopy
Type
article
Field-Weighted Citation Impact
4.72

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article

Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering‐type scanning near‐field optical microscope

Piotr Tatarczak, Iris Niehues, A. Wysmołek, Rainer Hillenbrand et al.
7 citations
Nanophotonics
Near-Field Optical Microscopy
4.72
article

Nanoscale resolved mapping of the dipole emission of hBN color centers with a scattering‐type scanning near‐field optical microscope

Piotr Tatarczak, Iris Niehues, A. Wysmołek, Rainer Hillenbrand, Aleksandra K. Dąbrowska, Martin Schnell, Korbinian J. Kaltenecker, Daniel Wigger, Julian Becker, Johannes Binder, Katarzyna Ludwiczak, Philippe Roelli, Robert Schmidt, Annika Klein-Hitpass
article en
7 citations

Abstract

Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL) emission characteristics of such quantum emitters in metalorganic vapor phase epitaxy grown hBN. On the one hand, we demonstrate direct near-field optical excitation and emission through interaction with the nanofocus of the tip resulting in a subdiffraction limited tip-enhanced PL hotspot. On the other hand, we show that indirect excitation and emission via scattering from the tip significantly increases the recorded PL intensity. This demonstrates that the tip-assisted PL (TAPL) process efficiently guides the generated light to the detector. We apply the TAPL method to map the in-plane dipole orientations of the hBN color centers on the nanoscale. This work promotes the widely available s-SNOM approach to applications in the quantum domain including characterization and optical control.

NanophotonicsVol. 14(3)
Ikerbasque (ES), University of the Basque Country (ES), University of Münster (DE), Nanosystems Initiative Munich (DE), CIC nanoGUNE (ES), Attocube Systems (Germany) (DE), University of Warsaw (PL), Ludwig-Maximilians-Universität München (DE)
Deutsche Forschungsgemeinschaft, Narodowym Centrum Nauki, Westfälische Wilhelms-Universität Münster, European Regional Development Fund, Agencia Estatal de Investigación
Openalex Percentile: Top 6%
Near-Field Optical Microscopy
4.72
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