On the Temperature Characteristics of Noise Diodes

Noise diodes are usually used to create noise generators. To date, the dependence of the parameters of the signal generated by a noise diode, its breakdown voltage, series and differential resistance, and the repetition rate of noise pulses on temperature has been poorly studied. In this paper, silicon planar noise diodes of ND102L, ND103L, and ND104L models are investigated. Using an experimental setup, it is found that an increase in temperature leads to an increase in the breakdown voltage of the studied noise diodes. The linearity coefficients of the breakdown voltage dependence on temperature are obtained and are equal to 2.6, 3.2, and 3.0 mV/K for the ND102L, ND103L, and ND104L diodes, respectively. It is established that the highest breakdown-voltage values are characteristic of the ND102L diodes, and the lowest ones are characteristic of the ND104L diodes in the entire range of studied temperatures. It is found that a temperature increase leads to a decrease in the series resistance. This dependence is linear and is most pronounced for ND102L diodes, and least pronounced for ND104L diodes. It is shown that the differential resistance does not depend on temperature in the studied temperature range. It is determined that the greatest dependence of the breakdown voltage and the repetition rate of noise pulses on temperature is characteristic of ND104L diodes, and the least, ND102L diodes; greatest stabilization of the supply voltage is required when using ND104L noise diodes.