Semiconductor to Insulator Transition of Twisted Graphene Nanoribbon via Boron and Nitrogen Incorporation

The boundary C atoms in the M-CX structures bonded with hydrogens shows comparatively negative partial charges due to higher electronegativity.Due to charge displacement, other C atoms show partially positive charges.

Authors

Institutions

Publication Details

Published
2025-01-27
DOI
https://doi.org/10.54985/peeref.2501p2385856
Primary Topic
Graphene research and applications
Type
article
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Semiconductor to Insulator Transition of Twisted Graphene Nanoribbon via Boron and Nitrogen Incorporation

Shariful Islam, Mohammad Tanvir Ahmed, Farid Ahmed
Graphene research and applications
article

Semiconductor to Insulator Transition of Twisted Graphene Nanoribbon via Boron and Nitrogen Incorporation

Shariful Islam, Mohammad Tanvir Ahmed, Farid Ahmed
article en

Abstract

The boundary C atoms in the M-CX structures bonded with hydrogens shows comparatively negative partial charges due to higher electronegativity.Due to charge displacement, other C atoms show partially positive charges.

University of Science and Technology (YE), Jahangirnagar University (BD)
Graphene research and applications
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Semiconductor to Insulator Transition of Twisted Graphene Nanoribbon via Boron and Nitrogen Incorporation — Shariful Islam, Mohammad Tanvir Ahmed, et al. · (2025) | TGRS Research Map | TGRS