Quantum anomalous Hall effect for metrology

The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal “quantum electrical metrology toolbox” that can perform quantum resistance, voltage, and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges—among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path toward a QAHE resistance standard realized in magnetically doped (Bi,Sb)2Te3 systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges, as well as modern strategies to overcome them.

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Publication Details

Journal
Applied Physics Letters
Published
2025-01-27
DOI
https://doi.org/10.1063/5.0233689
Citations
4
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
4.99

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Quantum anomalous Hall effect for metrology

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Quantum anomalous Hall effect for metrology

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article en
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Abstract

The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal “quantum electrical metrology toolbox” that can perform quantum resistance, voltage, and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges—among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path toward a QAHE resistance standard realized in magnetically doped (Bi,Sb)2Te3 systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges, as well as modern strategies to overcome them.

Applied Physics LettersVol. 126(4)
Physikalisch-Technische Bundesanstalt (DE), National Physical Laboratory (GB), University of Würzburg (DE), Norwegian Metrology Service (NO), University of Manchester (GB), University of Oxford (GB), Quantum Technologies (Sweden) (SE)
Government of the United Kingdom, UK Research and Innovation, Henry Royce Institute, European Partnership on Metrology, European Commission, Deutsche Forschungsgemeinschaft, Horizon 2020 Framework Programme, HORIZON EUROPE Framework Programme, Engineering and Physical Sciences Research Council, European Metrology Programme for Innovation and Research
Openalex Percentile: Top 6%
Topological Materials and Phenomena
4.99
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