Decoherence in Andreev spin qubits

We theoretically study the dephasing of an Andreev spin qubit (ASQ) due to electric and magnetic noise. Using a tight-binding model, we calculate the Andreev states formed in a Josephson junction where the link is a semiconductor with strong spin-orbit interaction. As a result of both the spin-orbit interaction and induced superconductivity, the local charge and spin of these states vary as a function of externally controllable parameters: the phase difference between the superconducting leads, an applied magnetic field, and filling of the underlying semiconductor. Concomitantly, coupling to fluctuations of the electric or magnetic environment will vary, which informs the rate of dephasing. We qualitatively predict the dependence of dephasing on the nature of the environment, magnetic field, phase difference between the junction, and filling of the semiconductor. Comparing the simulated electric- and magnetic-noise-induced dephasing rate to experiment suggests that the dominant source of noise is magnetic. Moreover, by appropriately tuning these external parameters, we find sweet spots at which we predict an enhancement in ASQ coherence times.

Authors

Institutions

Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-01-27
DOI
https://doi.org/10.1103/physrevb.111.045304
Citations
2
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
2.49

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Decoherence in Andreev spin qubits

Max Hays, Thomas Hazard, Silas Hoffman, Kyle Serniak et al.
2 citations
Physical review. B./Physical review. B
Quantum and electron transport phenomena
2.49
article

Decoherence in Andreev spin qubits

Max Hays, Thomas Hazard, Silas Hoffman, Kyle Serniak, Charles Tahan
article en
2 citations

Abstract

We theoretically study the dephasing of an Andreev spin qubit (ASQ) due to electric and magnetic noise. Using a tight-binding model, we calculate the Andreev states formed in a Josephson junction where the link is a semiconductor with strong spin-orbit interaction. As a result of both the spin-orbit interaction and induced superconductivity, the local charge and spin of these states vary as a function of externally controllable parameters: the phase difference between the superconducting leads, an applied magnetic field, and filling of the underlying semiconductor. Concomitantly, coupling to fluctuations of the electric or magnetic environment will vary, which informs the rate of dephasing. We qualitatively predict the dependence of dephasing on the nature of the environment, magnetic field, phase difference between the junction, and filling of the semiconductor. Comparing the simulated electric- and magnetic-noise-induced dephasing rate to experiment suggests that the dominant source of noise is magnetic. Moreover, by appropriately tuning these external parameters, we find sweet spots at which we predict an enhancement in ASQ coherence times.

Physical review. B./Physical review. BVol. 111(4)
MIT Lincoln Laboratory (US), Massachusetts Institute of Technology (US), University of Maryland, College Park (US)
U.S. Department of Energy, Massachusetts Institute of Technology, Office of the Director of National Intelligence, Oak Ridge Institute for Science and Education, U.S. Air Force
Reduced inequalities
Openalex Percentile: Top 14%
Quantum and electron transport phenomena
2.49
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Decoherence in Andreev spin qubits — Max Hays, Thomas Hazard, et al. · Physical review. B./Physical review. B (2025) | TGRS Research Map | TGRS