Volatile MoS<sub>2</sub> Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS<sub>2</sub>)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS<sub>2</sub> flakes requiring a forming step to enable RS. Herein, present volatile RS with multilayer MoS<sub>2</sub> grown by metal-organic chemical vapor deposition (MOCVD) with repeatable forming-free operation is presented. The devices show highly reproducible volatile RS with low operating voltages of ≈2 V and fast-switching times down to 130 ns considering their micrometer-scale dimensions. The switching mechanism is investigated based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, a physics-based compact model is developed and the implementation of the volatile memristors as artificial neurons in neuromorphic systems is exploredd.

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Publication Details

Journal
Small Science
Published
2025-01-27
DOI
https://doi.org/10.1002/smsc.202400523
Citations
13
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
9.50

Funders

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article

Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

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13 citations
Small Science
Advanced Memory and Neural Computing
9.50
article

Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Annika Grundmann, Lukas Völkel, Enrique G. Marín, Joachim Mayer, M. Heuken, Ke Ran, A. Godoy, Sofía Cruces, Andrei Vescan, H. Kalisch, Dennis Braun, Mohit D. Ganeriwala, Alwin Daus, Max C. Lemme, Jimin Lee
article en
13 citations

Abstract

Layered 2D semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS<sub>2</sub>)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS<sub>2</sub> flakes requiring a forming step to enable RS. Herein, present volatile RS with multilayer MoS<sub>2</sub> grown by metal-organic chemical vapor deposition (MOCVD) with repeatable forming-free operation is presented. The devices show highly reproducible volatile RS with low operating voltages of ≈2 V and fast-switching times down to 130 ns considering their micrometer-scale dimensions. The switching mechanism is investigated based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, a physics-based compact model is developed and the implementation of the volatile memristors as artificial neurons in neuromorphic systems is exploredd.

Small ScienceVol. 5(5)
University of Freiburg (DE), Forschungszentrum Jülich (DE), Universidad de Granada (ES), Aixtron (Germany) (DE), Ernst Ruska Centre (DE), AMO (Germany) (DE), RWTH Aachen University (DE)
European Commission, Bundesministerium für Bildung und Forschung, Agencia Estatal de Investigación, HORIZON EUROPE Marie Sklodowska-Curie Actions
Openalex Percentile: Top 2%
Advanced Memory and Neural Computing
9.50
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