Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for <i>DX</i>-center formation
We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the dark, while persistent EPR spectra are observed upon photoexcitation with photon energies greater than ∼1.3 eV. Thermally annealing the samples decreased the EPR signal, with the critical temperature to quench the EPR signal being larger in the lower Al-content sample. Using detailed first-principles calculations of Ge in AlGaN, we show all of these observations can be explained by accounting for the DX configuration of Ge in AlGaN.
Authors
- John L. Lyons (ORCID: https://orcid.org/0000-0001-8023-3055)
- M. E. Zvanut (ORCID: https://orcid.org/0000-0001-5295-0495)
- Darshana Wickramaratne (ORCID: https://orcid.org/0000-0002-1663-1507)
- Jason Forbus
Institutions
- United States Naval Research Laboratory (US)
- University of Alabama at Birmingham (US)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-01-27
- DOI
- https://doi.org/10.1063/5.0249701
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- U.S. Department of Energy
- Office of Naval Research