Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for <i>DX</i>-center formation

We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the dark, while persistent EPR spectra are observed upon photoexcitation with photon energies greater than ∼1.3 eV. Thermally annealing the samples decreased the EPR signal, with the critical temperature to quench the EPR signal being larger in the lower Al-content sample. Using detailed first-principles calculations of Ge in AlGaN, we show all of these observations can be explained by accounting for the DX configuration of Ge in AlGaN.

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Publication Details

Journal
Applied Physics Letters
Published
2025-01-27
DOI
https://doi.org/10.1063/5.0249701
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for DX-center formation

John L. Lyons, M. E. Zvanut, Darshana Wickramaratne, Jason Forbus
1 citations
Applied Physics Letters
GaN-based semiconductor devices and materials
1.26
article

Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for DX-center formation

John L. Lyons, M. E. Zvanut, Darshana Wickramaratne, Jason Forbus
article en
1 citations

Abstract

We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the dark, while persistent EPR spectra are observed upon photoexcitation with photon energies greater than ∼1.3 eV. Thermally annealing the samples decreased the EPR signal, with the critical temperature to quench the EPR signal being larger in the lower Al-content sample. Using detailed first-principles calculations of Ge in AlGaN, we show all of these observations can be explained by accounting for the DX configuration of Ge in AlGaN.

Applied Physics LettersVol. 126(4)
United States Naval Research Laboratory (US), University of Alabama at Birmingham (US)
U.S. Department of Energy, Office of Naval Research
Openalex Percentile: Top 25%
GaN-based semiconductor devices and materials
1.26
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