An Optimized Design of Active Current Source Driver for Mitigating Overshoot and Reducing Switching Losses in SiC MOSFETs
Gate driver techniques are crucial for managing the switching process of wide bandgap (WBG) semiconductor devices. Unlike voltage source gate drivers, current source gate drivers reduce switching losses by maintaining a relatively constant current during the gating process. However, this advantage is counterbalanced by increased overshoot, oscillation, and electromagnetic interference (EMI) noise. To address these challenges, an optimal active current source gate driver (ACSD) is proposed that meets the conflicting requirements of low switching losses and suppression of overshoot and oscillation by dynamically adjusting the driver current level. The effectiveness of this technique is demonstrated through both theoretical analysis and simulation validation.
Authors
- Yuebin Zhou (ORCID: https://orcid.org/0000-0003-0118-2283)
- Qiao Li (ORCID: https://orcid.org/0000-0002-8940-9966)
- Xiaokang Zhang (ORCID: https://orcid.org/0000-0003-4684-317X)
- Yue Wu (ORCID: https://orcid.org/0009-0006-1193-7853)
- Ziyao Zhang (ORCID: https://orcid.org/0009-0004-0354-8087)
Institutions
- Hunan University (CN)
- China Southern Power Grid (China) (CN)
Publication Details
- Published
- 2024-11-06
- DOI
- https://doi.org/10.1109/ciycee63099.2024.10846721
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00