Quantifying carrier dynamics and PL characterization of antimony-doped CdTe and CdSeTe

Methods Conclusions 100 nmOur team has achieved ~20% doping activation of CdSeTe with antimony (Sb), whose shallow acceptor level makes it a viable alternative to As. 1,2 Arsenic (As)-doped graded CdSeTe photovoltaics have achieved record efficiencies of 22.3%.Remaining challenges include doping activation of only ~2% in polycrystalline films and radiative voltage losses of ~100 mV.Here we use (transient) terahertz and photoluminescence spectroscopy of CdTe:Sb and CdSeTe:Sb to show sufficiently long bulk lifetimes to enable high-efficiency devices.Early results also indicate dominant bandgap emission in CdSeTe:Sb and a lack of potential fluctuations with Sb-doping that have proven detrimental for As-doped films.While more work is needed, these results show significant promise for Sb doping.