Investigation on Radiation Effects of White Neutron Source on COTS Solid-State Drives

Commercial solid-state drives (SSDs) were subjected to broad-spectrum neutron exposure at the China Spallation Neutron Source (CSNS) to analyze radiation-induced errors in components and functional interruptions in non-volatile memory express (NVMe) and serial advanced technology attachment (SATA) SSDs. The experiments revealed apparent sensitivity differences, with NVMe SSDs demonstrating better resistance at the module level due to advanced controller technology and enhanced error correction capabilities than SATA SSDs. For NVMe SSDs, functional interruptions were primarily identified as <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> Flash faults, such as timeouts, and dynamic random access memory (DRAM) errors, such as stuck bits, while controller vulnerabilities contributed minimally. Moreover, this article examines the dominance of read errors as the primary failure mode in <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> Flash and explores how the cumulative characteristic of these errors correlates with functional interruptions.

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Publication Details

Journal
IEEE Transactions on Nuclear Science
Published
2025-01-27
DOI
https://doi.org/10.1109/tns.2025.3535502
Primary Topic
Nuclear Physics and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Investigation on Radiation Effects of White Neutron Source on COTS Solid-State Drives

Jieyi Wang, Yingqi Ma, Xiang Zhu, Longlong Zhang et al.
IEEE Transactions on Nuclear Science
Nuclear Physics and Applications
article

Investigation on Radiation Effects of White Neutron Source on COTS Solid-State Drives

Jieyi Wang, Yingqi Ma, Xiang Zhu, Longlong Zhang, Jianwei Han, Xiaoheng Xu, Tian Yu
article en

Abstract

Commercial solid-state drives (SSDs) were subjected to broad-spectrum neutron exposure at the China Spallation Neutron Source (CSNS) to analyze radiation-induced errors in components and functional interruptions in non-volatile memory express (NVMe) and serial advanced technology attachment (SATA) SSDs. The experiments revealed apparent sensitivity differences, with NVMe SSDs demonstrating better resistance at the module level due to advanced controller technology and enhanced error correction capabilities than SATA SSDs. For NVMe SSDs, functional interruptions were primarily identified as <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> Flash faults, such as timeouts, and dynamic random access memory (DRAM) errors, such as stuck bits, while controller vulnerabilities contributed minimally. Moreover, this article examines the dominance of read errors as the primary failure mode in <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> Flash and explores how the cumulative characteristic of these errors correlates with functional interruptions.

IEEE Transactions on Nuclear ScienceVol. 72(3)
National Space Science Center (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences
Affordable and clean energy
Openalex Percentile: Top 98%
Nuclear Physics and Applications
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