Reconfigurable 10T SRAM for Energy-Efficient CAM Operation and In-Memory Computing

The limitations of the von Neumann architecture in terms of power consumption and throughput are increasingly evident. In-memory computing is a promising computing paradigm to alleviate this limitation. This article proposes a high-speed and low-power 10T compute-static random-access memory (CSRAM) capable of conducting rowwise search operations and executing in-memory logic functions efficiently. A self-suppressed discharge scheme is implemented to curtail the power consumption of the search operation by reducing the discharge swing of the match lines (MLs). The rowwise search scheme avoids vertical data storage, enhancing the compatibility between different operation modes. The proposed 10T SRAM architecture addresses the issue of sneak currents effectively when multiple lines are activated. Additionally, decoupled read ports eliminate compute access disturbance. To validate the design, a 4Kb array is designed with a 40-nm CMOS technology. At a supply voltage (VDD) of 1.1 V, the in-memory logic operations are capable of operating at a frequency of 752 MHz, consuming 29.2 fJ/bit. In binary content-addressable memory (BCAM) search mode, the minimum energy consumption of 0.51 fJ/bit occurs at 0.8 V and 120 MHz.