Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot
We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of $$ \sim $$ 1 MHz at the first lens with a second-order correlation function of $${{g}^{{(2)}}}(0)$$ = 0.14.
Authors
- Yu. M. Serov (ORCID: https://orcid.org/0000-0001-5440-7787)
- N. Maleev
- I. V. Sedova (ORCID: https://orcid.org/0000-0002-9540-0933)
- A. I. Galimov
- A. I. Veretennikov
- S. I. Troshkov
- M. M. Kulagina
- Е. В. Никитина (ORCID: https://orcid.org/0000-0002-4655-4418)
- M. A. Bobrov (ORCID: https://orcid.org/0000-0001-7271-5644)
- A. A. Toropov
- A. P. Vasiliev
- A. G. Kuzmenkov (ORCID: https://orcid.org/0000-0002-7221-0117)
- M. V. Rakhlin (ORCID: https://orcid.org/0000-0002-8283-1611)
- S. V. Sorokin
- Yu. M. Zadiranov
- D. S. Berezina (ORCID: https://orcid.org/0000-0001-9190-1768)
- G. V. Klimko
- Yu. A. Salii
- G. P. Veyshtort
Institutions
- Russian Academy of Sciences (RU)
- Saint Petersburg Academic University (RU)
- Submicron Heterostructures for Microelectronics Research and Engineering Center (RU)
- Ioffe Institute (RU)
Publication Details
- Journal
- Journal of Experimental and Theoretical Physics Letters
- Published
- 2025-01-27
- DOI
- https://doi.org/10.1134/s0021364024605116
- Citations
- 3
- Primary Topic
- Quantum Information and Cryptography
- Type
- article
- Field-Weighted Citation Impact
- 7.44