Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.

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Publication Details

Journal
Scientific Reports
Published
2025-01-27
DOI
https://doi.org/10.1038/s41598-025-87602-7
Citations
4
Primary Topic
Electron and X-Ray Spectroscopy Techniques
Type
article
Field-Weighted Citation Impact
2.64

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article

Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

Chad Pennington, Thomas Juffmann, R. M. Tromp, Siddharth Karkare et al.
4 citations
Scientific Reports
Electron and X-Ray Spectroscopy Techniques
2.64
article

Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

Chad Pennington, Thomas Juffmann, R. M. Tromp, Siddharth Karkare, Sense Jan van der Molen, K. Evans‐Lutterodt, Elena Echeverría, Mengjia Gaowei, Kali Prasanna Mondal, Jared Maxson, Jean Jordan‐Sweet, J. Smedley, Pallavi Saha, W. G. Stam
article en
4 citations

Abstract

The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.

Scientific ReportsVol. 15(1)
Leiden University (NL), University of Vienna (AT), Brookhaven National Laboratory (US), Cornell University (US), SLAC National Accelerator Laboratory (US), Max Perutz Labs (AT), Vienna Center for Quantum Science and Technology (AT), Arizona State University (US)
National Science Foundation, U.S. Department of Energy, European Commission, Office of Science, Brookhaven National Laboratory
Openalex Percentile: Top 12%
Electron and X-Ray Spectroscopy Techniques
2.64
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