Reducing Nonradiative Recombination in Halide Perovskites through Appropriate Band Gaps and Heavy Atomic Masses

Halide perovskite optoelectronic devices achieve high energy conversion efficiencies. However, their efficiency decreases significantly with an increase in temperature. This decline is likely caused by changes in nonradiative recombination and electron-phonon coupling, which remain underexplored. When the perovskite lattice temperature increases, anharmonicity induces energy level fluctuation and band gap narrowing by modulating electron-phonon interactions. As lattice vibrations intensify, high-frequency phonons progressively dominate the carrier dynamic processes in halide perovskites, thereby strengthening the coupling between the electronic subsystem and high-frequency phonons. The increased overlap of electron wave functions strengthens non-adiabatic coupling, thereby accelerating the nonradiative recombination process. On the basis of these findings, we propose the introduction of appropriate band gap materials and heavy atoms at the B-site and X-site to modulate electron-phonon coupling, thereby mitigating nonradiative recombination and enhancing halide perovskite solar cell performance.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2025-01-27
DOI
https://doi.org/10.1021/acs.jpclett.4c03358
Citations
8
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
5.84

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article

Reducing Nonradiative Recombination in Halide Perovskites through Appropriate Band Gaps and Heavy Atomic Masses

Junmin Xia, Shufen Chen, Jibin Zhang, Siyu Chen et al.
8 citations
The Journal of Physical Chemistry Letters
Perovskite Materials and Applications
5.84
article

Reducing Nonradiative Recombination in Halide Perovskites through Appropriate Band Gaps and Heavy Atomic Masses

Junmin Xia, Shufen Chen, Jibin Zhang, Siyu Chen, Yangzhi Ma, Wei Shen, Bo Cai, Yang Bing, Yi Liu, Lihui Liu, Kun Cao
article en
8 citations

Abstract

Halide perovskite optoelectronic devices achieve high energy conversion efficiencies. However, their efficiency decreases significantly with an increase in temperature. This decline is likely caused by changes in nonradiative recombination and electron-phonon coupling, which remain underexplored. When the perovskite lattice temperature increases, anharmonicity induces energy level fluctuation and band gap narrowing by modulating electron-phonon interactions. As lattice vibrations intensify, high-frequency phonons progressively dominate the carrier dynamic processes in halide perovskites, thereby strengthening the coupling between the electronic subsystem and high-frequency phonons. The increased overlap of electron wave functions strengthens non-adiabatic coupling, thereby accelerating the nonradiative recombination process. On the basis of these findings, we propose the introduction of appropriate band gap materials and heavy atoms at the B-site and X-site to modulate electron-phonon coupling, thereby mitigating nonradiative recombination and enhancing halide perovskite solar cell performance.

The Journal of Physical Chemistry LettersVol. 16(5)
University of Cambridge (GB), Zhengzhou University (CN), Nanjing University of Posts and Telecommunications (CN)
Synergetic Innovation Center for Organic Electronics and Information Displays, National Natural Science Foundation of China, Jilin University, China Scholarship Council, Natural Science Foundation of Jiangsu Province, Nanjing University of Posts and Telecommunications, Jiangsu Science and Technology Department, Priority Academic Program Development of Jiangsu Higher Education Institutions, Natural Science Research of Jiangsu Higher Education Institutions of China, Graduate Research and Innovation Projects of Jiangsu Province
Openalex Percentile: Top 4%
Perovskite Materials and Applications
5.84
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