Tuning the Magnetization Direction and Valley Splitting of Monolayer Ferrovalley CrISe: Implications for Spintronics and Valleytronics Devices

Modulating the magnetization direction effectively influences the valley splitting properties, offering an approach for designing valley-electronic-based devices. This work uses first-principles calculations to modulate the magnetic anisotropy of the ferrovalley CrISe monolayer semiconductor through strain (uniaxial and biaxial) and electron correlation effects. These approaches enable tuning of the easy magnetization axis from in-plane to out-of-plane, directly influencing valley splitting. It is worth noting that uniaxial strain adjusts the easy magnetization axis to a precise angle, allowing for the fine control of both the magnetization direction and valley splitting. This study provides a certain theoretical foundation and technical pathway for designing spin-valley electronic devices with broad application potential.