Weak Antilocalization and Negative Magnetoresistance of the Gate-Tunable PbTe Thin Films

We have systematically studied the electromagnetic transport properties of PbTe thin films under gate voltage modulation. The system demonstrates pronounced electron-electron interactions exclusively within the gate voltage range where only hole carriers are present. Furthermore, the Berry phase is utilized to qualitatively elucidate the transition between weak antilocalization (WAL) and weak localization (WL) through the regulation of gate voltage and temperature. Using the three-resistor model, we have effectively explained the correlation between the characteristic temperature of the <i>R</i>-<i>T</i> curve, the coexistence of electron-hole carriers, and the nonmonotonic temperature dependence of negative magnetoresistance (NMR), consistently indicating that complex magnetotransport phenomena are caused by microscopic disorder. Our research findings open up new avenues for exploring and manipulating the magnetotransport properties of PbTe thin films.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2025-01-27
DOI
https://doi.org/10.1021/acs.jpclett.4c03425
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Weak Antilocalization and Negative Magnetoresistance of the Gate-Tunable PbTe Thin Films

Tong Su, Wenyu Hu, Weiwei Zhao, Kang Li et al.
The Journal of Physical Chemistry Letters
Topological Materials and Phenomena
article

Weak Antilocalization and Negative Magnetoresistance of the Gate-Tunable PbTe Thin Films

Tong Su, Wenyu Hu, Weiwei Zhao, Kang Li, Jielin Yang, Zhe Li, Jian‐Yuan Zhao, Huizhen Li, Yiming Chen, Mei Du, Kuo Yang
article en

Abstract

We have systematically studied the electromagnetic transport properties of PbTe thin films under gate voltage modulation. The system demonstrates pronounced electron-electron interactions exclusively within the gate voltage range where only hole carriers are present. Furthermore, the Berry phase is utilized to qualitatively elucidate the transition between weak antilocalization (WAL) and weak localization (WL) through the regulation of gate voltage and temperature. Using the three-resistor model, we have effectively explained the correlation between the characteristic temperature of the <i>R</i>-<i>T</i> curve, the coexistence of electron-hole carriers, and the nonmonotonic temperature dependence of negative magnetoresistance (NMR), consistently indicating that complex magnetotransport phenomena are caused by microscopic disorder. Our research findings open up new avenues for exploring and manipulating the magnetotransport properties of PbTe thin films.

The Journal of Physical Chemistry LettersVol. 16(5)
Harbin Institute of Technology (CN), Southern University of Science and Technology (CN), Photonic Systems (United States) (US), Smart Material (Germany) (DE), Division of Materials Science and Engineering (AU), Printed Electronics (United Kingdom) (GB), State Key Laboratory of Advanced Welding and Joining, Hubei University (CN)
National Natural Science Foundation of China
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Topological Materials and Phenomena
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