Thin film epitaxy of high quality ferromagnetic semiconductor EuO using pulsed laser deposition equipped with Nd:YAG laser
Abstract Pulsed laser deposition with the fourth harmonic wave of Nd-doped Y3Al5O12 laser was applied to thin film epitaxy of a ferromagnetic semiconductor EuO which contains metastable Eu2+ ions. Highly crystalline, flat, and stoichiometric EuO (001) epitaxial thin films were successfully grown on YAlO3 (110) single crystal substrates. The EuO film exhibited ferromagnetism reflecting the 4f electronic configuration of Eu2+. These results indicate that Nd-doped Y3Al5O12 laser is useful for deposition of oxide thin films requiring oxygen stoichiometry.
Authors
- Masamichi Negishi (ORCID: https://orcid.org/0000-0002-2482-8334)
- Yusuke Sato (ORCID: https://orcid.org/0000-0003-0913-7815)
- Ryota Takahashi (ORCID: https://orcid.org/0000-0003-2430-2444)
- Satoshi Sasaki (ORCID: https://orcid.org/0000-0003-3643-1649)
- Tomoteru Fukumura (ORCID: https://orcid.org/0000-0002-8957-3520)
- R. C. Sahoo (ORCID: https://orcid.org/0000-0002-3435-5999)
Institutions
- Nihon University (JP)
- Nihon Fukushi University (JP)
- Tohoku University (JP)
- Advanced Institute of Materials Science (JP)
Publication Details
- Journal
- Chemistry Letters
- Published
- 2025-01-27
- DOI
- https://doi.org/10.1093/chemle/upaf005
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00