Study of CdSe thin films using the spectroscopic ellipsometry method

In this research, we investigated the optical properties of CdSe thin films on glass substrates using spectroscopic ellipsometry. The samples were analysed using an M-2000 rotation compensator spectroscopic ellipsometer at room temperature, covering a photon energy range of 1.5-7.0 eV. We used an appropriate dispersion model to obtain the spectral dispersion of the optical constants. We calculated the thickness, dielectric permittivity (real and imaginary parts), refraction, and extinction coefficients of the thin layers. The results showed high transparency that varied with the size of the CdSe thin films. Additionally, we determined the bandgap width for samples with thicknesses of 350 nm and 400 nm, which were produced using the chemical deposition method.

Authors

Publication Details

Journal
Chalcogenide Letters
Published
2024-12-31
DOI
https://doi.org/10.15251/cl.2024.2112.1035
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.21
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article

Study of CdSe thin films using the spectroscopic ellipsometry method

Y. I. Alıyev, M. E. Aliyev, Kh. N. Ahmadova, L.N. Ibrahimova
1 citations
Chalcogenide Letters
Chalcogenide Semiconductor Thin Films
0.21
article

Study of CdSe thin films using the spectroscopic ellipsometry method

Y. I. Alıyev, M. E. Aliyev, Kh. N. Ahmadova, L.N. Ibrahimova
article en
1 citations

Abstract

In this research, we investigated the optical properties of CdSe thin films on glass substrates using spectroscopic ellipsometry. The samples were analysed using an M-2000 rotation compensator spectroscopic ellipsometer at room temperature, covering a photon energy range of 1.5-7.0 eV. We used an appropriate dispersion model to obtain the spectral dispersion of the optical constants. We calculated the thickness, dielectric permittivity (real and imaginary parts), refraction, and extinction coefficients of the thin layers. The results showed high transparency that varied with the size of the CdSe thin films. Additionally, we determined the bandgap width for samples with thicknesses of 350 nm and 400 nm, which were produced using the chemical deposition method.

Chalcogenide LettersVol. 21(12)
Openalex Percentile: Top 44%
Chalcogenide Semiconductor Thin Films
0.21
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