Study of CdSe thin films using the spectroscopic ellipsometry method
In this research, we investigated the optical properties of CdSe thin films on glass substrates using spectroscopic ellipsometry. The samples were analysed using an M-2000 rotation compensator spectroscopic ellipsometer at room temperature, covering a photon energy range of 1.5-7.0 eV. We used an appropriate dispersion model to obtain the spectral dispersion of the optical constants. We calculated the thickness, dielectric permittivity (real and imaginary parts), refraction, and extinction coefficients of the thin layers. The results showed high transparency that varied with the size of the CdSe thin films. Additionally, we determined the bandgap width for samples with thicknesses of 350 nm and 400 nm, which were produced using the chemical deposition method.
Authors
- Y. I. Alıyev (ORCID: https://orcid.org/0000-0001-8896-2180)
- M. E. Aliyev
- Kh. N. Ahmadova
- L.N. Ibrahimova
Publication Details
- Journal
- Chalcogenide Letters
- Published
- 2024-12-31
- DOI
- https://doi.org/10.15251/cl.2024.2112.1035
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.21