Simulation study on lead-free double Cs2AgBiBr6/GaAs tandem solar cells

Cs2AgBiBr6, a double perovskite devoid of lead, is a remarkable alternative to traditional perovskite solar cells. This research utilised Silvaco TCAD simulation software to construct and examine lead-free double Cs2AgBiBr6/gallium arsenide tandem devices. By optimising the perovskite layer thickness, the thickness and doping concentration of the gallium arsenide base layer, selecting an appropriate carrier transport layer thickness, and integrating an anti-reflective layer, the conversion efficiencies of the four-terminal lead-free double Cs2AgBiBr6/gallium arsenide tandem solar cell is achieved up to 31.71%. Based on the study of 4-T tandem devices, current matching of 2-T tandem devices was performed. The 2-T tandem device achieved an energy conversion efficiency of 26.35% by optimising the doping concentration of the GaAs substrate layer. Furthermore, the 2-T tandem device energy conversion efficiency remains at 23.40% following the current matching under spectral AM0, which has the potential application in space.

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Publication Details

Journal
Journal of Ovonic Research
Published
2025-01-09
DOI
https://doi.org/10.15251/jor.2025.211.1
Citations
3
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
2.19

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article

Simulation study on lead-free double Cs2AgBiBr6/GaAs tandem solar cells

Meijuan Yu, Jifeng Yuan, X. H. Deng
3 citations
Journal of Ovonic Research
Perovskite Materials and Applications
2.19
article

Simulation study on lead-free double Cs2AgBiBr6/GaAs tandem solar cells

Meijuan Yu, Jifeng Yuan, X. H. Deng
article en
3 citations

Abstract

Cs2AgBiBr6, a double perovskite devoid of lead, is a remarkable alternative to traditional perovskite solar cells. This research utilised Silvaco TCAD simulation software to construct and examine lead-free double Cs2AgBiBr6/gallium arsenide tandem devices. By optimising the perovskite layer thickness, the thickness and doping concentration of the gallium arsenide base layer, selecting an appropriate carrier transport layer thickness, and integrating an anti-reflective layer, the conversion efficiencies of the four-terminal lead-free double Cs2AgBiBr6/gallium arsenide tandem solar cell is achieved up to 31.71%. Based on the study of 4-T tandem devices, current matching of 2-T tandem devices was performed. The 2-T tandem device achieved an energy conversion efficiency of 26.35% by optimising the doping concentration of the GaAs substrate layer. Furthermore, the 2-T tandem device energy conversion efficiency remains at 23.40% following the current matching under spectral AM0, which has the potential application in space.

Journal of Ovonic ResearchVol. 21(1)
Nanchang University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Jiangxi Province
Openalex Percentile: Top 14%
Perovskite Materials and Applications
2.19
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Simulation study on lead-free double Cs2AgBiBr6/GaAs tandem solar cells — Meijuan Yu, Jifeng Yuan, et al. · Journal of Ovonic Research (2025) | TGRS Research Map | TGRS