Sb doping via drive-in diffusion as an alternative to in-situ doping in VTD
nmGroup-V doping can enhance the efficiency of CdTe photovoltaic devices by increasing the open-circuit voltage (Voc), if long lifetimes can be retained and radiative voltage loss can be avoided.In this preliminary study, ex-situ Sb doping via drive-in diffusion improved grain sizes compared to Sb-free films without CdCl 2 treatment.Sb doping did not reduce the carrier lifetime for uniform CdSeTe absorbers.Additionally, the CST-air surface recombination decreased with Sb.No potential fluctuations were observed by PL at this doping level.
Authors
- Gregory Manoukian (ORCID: https://orcid.org/0000-0001-8224-5906)
- William N. Shafarman (ORCID: https://orcid.org/0000-0002-8937-4775)
- Ali Çiriş (ORCID: https://orcid.org/0000-0003-4266-2080)
- Jason B. Baxter (ORCID: https://orcid.org/0000-0001-8702-3915)
- Kevin D. Dobson (ORCID: https://orcid.org/0000-0001-9482-477X)
- Bin Du (ORCID: https://orcid.org/0000-0002-4327-0073)
- Alex Ashley
Institutions
- Drexel University (US)
- University of Delaware (US)
Publication Details
- Published
- 2024-10-24
- DOI
- https://doi.org/10.2172/2504627
- Primary Topic
- Advanced MRI Techniques and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00