Spatial Distribution Analysis of Functional Groups in Resist Thin Film Using Reflection-Mode Resonant Soft X-ray Scattering

An important issue in EUV resist is the development of low line width roughness (LWR) resists. One of the factors that worsen LWR is hypothesized to be the non-uniform distribution of functional groups within the resist. Therefore, it is required for the development of low LWR resist that the controlling of the spatial distribution of resist component materials on the nanometer scale.